3D GaN nanoarchitecture for field-effect transistors

Charge trapping on defects in AlGaN/GaN field effect transistors

The presence of electronic traps in GaN-based devices limits device performance and reliability. Crystallographic defects in the bulk and electronic states on the surface act as trapping centers. We review the trapping phenomena in GaN-based high electron mobility transistors and discuss a characterization method, current transient spectroscopy, applied for trap identification. Probing the char...

Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

We have studied experimentally the effect of ambient temperature on performance of the surface-passivated Al0.2Ga0.8N/GaN heterostructure field-effect transistors in the temperature range from 25°C to 250°C. The measured data have been compared with physics-based modeling of the GaN transistor characteristics under different ambient temperatures. The experimental data, showing about 33% degrada...